TOKYO, May 18 (IANS) Micron Technology will invest up to 500 billion yen ($3.6 billion) in Japan over the next few years, with close support from the Japanese government, to enable the next wave of mass technological innovation such as rapidly emerging generative AI applications.
Micron Technology will introduce its extreme ultraviolet (EUV) technology to Japan, leveraging this cutting-edge patterning technology to manufacture its next generation DRAM, 1-gamma node.
Micron will be the first semiconductor company to bring EUV technology to Japan for production, the company said in a statement, with the Hiroshima fab playing an important role in the company’s development of the 1-gamma node.
“We are proud to be the first to use UV in Japan and to develop and manufacture 1-gamma at our Hiroshima plant. Our plans reflect our continued commitment to Japan, our strong ties with the Japanese government and the exceptional talent of the Micron Hiroshima team,” said the President and CEO of Micron Hiroshima. Micron, Sanjay Mehrotra.
Micron enables increased memory density, improved power efficiency, and lower cost per bit, helping to open up new opportunities for digitization, sustainability, green transformation, and automation.
“Micron and Japan’s announcement of 1-gamma memory production in Hiroshima is a huge step forward in securing semiconductor supply chains,” said Rahm Emanuel, US Ambassador to Japan. “This partnership demonstrates how allies, when working together, can create economic opportunity and security in cutting-edge technologies.”
EUV lithography is the most advanced semiconductor manufacturing process in the world.
Micron’s integration of EUV into the next node will play a key role in allowing Node to deliver faster, more energy-efficient, higher-performance memory products, and will enable the company to continue its relentless pursuit of industry-first memory innovation.
– Jans
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